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Composite Transistors
XN06543 (XN6543)
Silicon NPN epitaxial planar type
Unit: mm
For low-noise amplification (2 GHz band) Features
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
4
2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
3
2
1
0.30+0.10 -0.05
Basic Part Number
* 2SC3904 x 2
0.50+0.10 -0.05 10
1.1+0.2 -0.1
(0.65)
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 15 10 2 65 200 150 -55 to +150 Unit V V V mA mW C C
1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74
0 to 0.1
Marking Symbol: 9Y Internal Connection
4 5 6
1.1+0.3 -0.1
4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package
Tr2 3 2
Tr1
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio * Transition frequency Noise figure Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Symbol ICBO IEBO hFE hFE(Small
/Large)
1
Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 200 MHz VCE = 8 V, IC = 7 mA, f = 1.5 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 20 mA, f = 1.5 GHz VCE = 8 V, IC = 20 mA, f = 1.5 GHz
Min
Typ
Max 1 1
Unit A A GHz
50 0.50 7.0
120 0.99 8.5 2.2 0.6
300
fT NF Cob S21e2 GUM
3.0 1.0
dB pF dB dB
7
9 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004 SJJ00112BED
0.40.2
5
1
XN06543
PC Ta
240
30
IC VCE
Ta = 25C IB = 250 A
120
IC VBE
VCE = 8 V
Total power dissipation PT (mW)
200
25
100
Collector current IC (mA)
Collector current IC (mA)
160
20
200 A
80 Ta = 75C 60
25C -25C
120
15
150 A 100 A 50 A
80
10
40
40
5
20
0 0 40 80 120 160
0
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 10
240
hFE IC
VCE = 8 V
fT I C
12 VCE = 8 V f = 1.5 GHz Ta = 25C
Forward current transfer ratio hFE
1 Ta = 75C 10-1 25C -25C
160
Ta = 75C
Transition frequency fT (GHz)
10 100
200
10
8
120 25C 80 -25C 40
6
4
10-2
2
10-3 0.1
1
10
100
0 0.1
1
0
1
10
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1.2
GUM IC
Maximum unilateral power gain GUM (dB)
IE = 0 f = 1 MHz Ta = 25C
12 VCE = 8 V f = 1.5 GHz Ta = 25C
6
NF IC
VCE = 8 V f = 1.5 GHz Ta = 25C
1.0
10
5
0.8
Noise figure NF (dB)
8
4
0.6
6
3
0.4
4
2
0.2
2
1
0
1
10
100
0 0.1
1
10
100
0 0.1
1
10
100
Collector-base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00112BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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